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CIGS Solar Cells

CIGS solar cell manufacturing consists of several process steps and these process steps can alter dependent on which substrate material (i.e. Glass, polymer or metal foil) is being processed. The standard deposition process steps listed below are based on processing standard soda glass:

  1. Molybdenum metal contact layer (DC sputter)
  2. CIGS Absorber Layer (DC Sputter or thermal evaporation)
  3. Se Evaporation and rapid thermal processing (Only required following DC sputter of CIG)
  4. NaFl Buffer Layer (Chemical Bath Deposition)
  5. Transparent Conducting Oxides (TCO) (DC pulse/RF Sputtering)

Quantum 2010 in-line pilot production system for CIGS Absorber Layer

Thin film CIGS (Copper, Indium, Gallium Sellenide) solar cell technology has been identified as technologically and commercially important for the next generation of solar power generation. CIGS solar cells offer potentially high efficiencies ( 20.5% has been published) combined with the significant manufacturing cost advantantages associated with thin film technology compared to that of single crystal silicon. The Quantum 2010 in-line pilot production system has been developed to produce  the CIGS absorber layer using the 3 stage process. SVS are the first manufacturers in the world that have attempted to design a deposition system that addresses the 3 stage process on a production scale.

Other manufacturers have produced systems for the single and two stage CIGS processes, however efficiencies produced using these process are limited. All of the world record efficiencies recorded have been produced using the 3 stage process.

System Features:

  • Capable of processing 30cm x 30cm glass substrates.
  • Process chamber configured for 3 stage process
  • Turbo pumped Loadlock entry system
  • Accurate substrate heating to 600°C
  • Large capacity effusion cells
  • Deposition uniformity < 5%
  • High capacity turbo pumping of the process chamber
  • Rapid Substrate cooling after processing
  • Full system automation
  • Comprehensive datalogging of all major process parameters

Key Suppliers and Partners:

  • Oerlikon Leybold Vacuum Ltd
  • Veeco Instruments
  • VAT Vacuum Products
  • Rockwell Automation
  • NTE Vacuum Ltd
  • Centre of Renewable Energy and Systems Technology (CREST), Loughborough University

Acknowledgements :

A special thank you to Professor Ayodhya Tiwari of ETH Zurich and Dr Hari Upudhyaya of CREST for their involvement in the development of the design of the Quantum 2010 system and their ongoing support in the development of the process.

The V2800 Sputter System for Molybdenum and CuGa and In layers 

The V2800 Sputter system is configured for DC sputtering of the Molybdenum metal contact layer and CuGa and Indium absorber layer.

System Features:

  • Capable of processing 30cm x 30cm glass substrates.
  • Process chamber configured for 4 sputter target positions.
  • Turbo pumped Loadlock entry system
  • Deposition uniformity < 5%
  • 2 x 5kW DC power supplies with 2 x 2 way DC switches.
  • Automated process gas pressure control configured for one gas
  • Baratron pressure measurement of process gas
  • High capacity cryo pumping of the process chamber
  • Full system automation
  • Comprehensive datalogging of all major process parameters

The V2800 Sputter System for Transparent Conducting Oxide (TCO) layers  

The V2800 Sputter system is configured for RF sputtering of the ZnO and ZnO:Al layers.

System Features:

  • Capable of processing 30cm x 30cm glass substrates.
  • Process chamber configured for 4 sputter target positions.
  • Turbo pumped Loadlock entry system
  • Deposition uniformity < 5%
  • 3kW RF power supply and autotune network with 4 way RF switch.
  • Automated process gas pressure control configured for two gases
  • Baratron pressure measurement of process gas
  • High capacity turbo pumping of the process chamber
  • Full system automation
  • Comprehensive datalogging of all major process parameters

For more infomation Enquire Now

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